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Effect of boron doping on the wear behavior of the growth and nucleation surfaces of micro- and nanocrystalline diamond films

机译:硼掺杂对微晶和纳米晶金刚石膜生长和成核表面磨损行为的影响

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摘要

B-doped diamond has become the ultimate material for applications in the field of microelectromechanical systems (MEMS), which require both highly wear resistant and electrically conductive diamond films and microstructures. Despite the extensive research of the tribological properties of undoped diamond, to date there is very limited knowledge of the wear properties of highly B-doped diamond. Therefore, in this work a comprehensive investigation of the wear behavior of highly B-doped diamond is presented. Reciprocating sliding tests are performed on micro- and nanocrystalline diamond (MCD, NCD) films with varying B-doping levels and thicknesses. We demonstrate a linear dependency of the wear rate of the different diamond films with the B-doping level. Specifically, the wear rate increases by a factor of 3 between NCD films with 0.6 and 2.8 at. % B-doping levels. This increase in the wear rate can be linked to a 50% decrease in both hardness and elastic modulus of the highly B-doped NCD films, as determined by nanoindentation measurements. Moreover, we show that fine-grained diamond films are more prone to wear. Particularly, NCD films with a 3× smaller grain size but similar B-doping levels exhibit a double wear rate, indicating the crucial role of the grain size on the diamond film wear behavior. On the other hand, MCD films are the most wear-resistant films due to their larger grains and lower B-doping levels. We propose a graphical scheme of the wear behavior which involves planarization and mechanochemically driven amorphization of the surface to describe the wear mechanism of B-doped diamond films. Finally, the wear behavior of the nucleation surface of NCD films is investigated for the first time. In particular, the nucleation surface is shown to be susceptible to higher wear compared to the growth surface due to its higher grain boundary line density.
机译:掺B的金刚石已成为微机电系统(MEMS)领域中应用的最终材料,而MEMS既需要高度耐磨且导电的金刚石薄膜和微结构。尽管对未掺杂金刚石的摩擦学性能进行了广泛的研究,但迄今为止,对高度掺B的金刚石的磨损性能的了解非常有限。因此,在这项工作中,对高B掺杂金刚石的磨损行为进行了全面研究。在具有不同B掺杂水平和厚度的微晶和纳米晶金刚石(MCD,NCD)膜上进行往复滑动测试。我们证明了不同金刚石薄膜的磨损率与B掺杂水平的线性相关性。具体地说,在0.6和2.8 at的NCD膜之间,磨损率增加了3倍。 B掺杂水平%。磨损率的这种增加可以与高度掺杂B的NCD薄膜的硬度和弹性模量降低50%有关,这是通过纳米压痕测量确定的。此外,我们显示出细粒钻石膜更容易磨损。特别是,具有3倍较小晶粒尺寸但类似的B掺杂水平的NCD膜具有两倍的磨损率,这表明晶粒尺寸对金刚石膜的磨损行为至关重要。另一方面,MCD膜由于其较大的晶粒和较低的B掺杂水平而成为最耐磨的膜。我们提出了一种磨损行为的图形化方案,该方案涉及平面化和机械化学驱动的表面非晶化,以描述掺B金刚石膜的磨损机理。最后,首次研究了NCD薄膜成核表面的磨损行为。特别地,由于其晶界线密度较高,因此显示出与生长表面相比,成核表面更易磨损。

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